A simple method for sub-100 nm pattern generation with I-line double-patterning technique

نویسندگان

  • Tzu-I Tsai
  • Horng-Chih Lin
  • Min-Feng Jian
  • Tiao-Yuan Huang
  • Tien-Sheng Chao
چکیده

We have developed a simple method adopting double-patterning technique to extend the I-line stepper limit for the sub-100 nm poly-Si pattern generation in this work. Through in-line and cross-sectional scanned electron microscopic analyses of the generated patterns, we confirmed the feasibility of the double-patterning technique for the fabrication of nano-scale devices. Resolution capability of this technique has been confirmed to be at least 100 nm, which is much superior to the resolution limit of conventional I-line lithography. This approach has also been applied for fabricating p-channel metal–oxide-semiconductor field-effect transistors. Excellent device characteristics were verified. 2010 Elsevier Ltd. All rights reserved.

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 50  شماره 

صفحات  -

تاریخ انتشار 2010