A simple method for sub-100 nm pattern generation with I-line double-patterning technique
نویسندگان
چکیده
We have developed a simple method adopting double-patterning technique to extend the I-line stepper limit for the sub-100 nm poly-Si pattern generation in this work. Through in-line and cross-sectional scanned electron microscopic analyses of the generated patterns, we confirmed the feasibility of the double-patterning technique for the fabrication of nano-scale devices. Resolution capability of this technique has been confirmed to be at least 100 nm, which is much superior to the resolution limit of conventional I-line lithography. This approach has also been applied for fabricating p-channel metal–oxide-semiconductor field-effect transistors. Excellent device characteristics were verified. 2010 Elsevier Ltd. All rights reserved.
منابع مشابه
Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique
متن کامل
Patterning Sub-30-nm MOSFET Gate with -Line Lithography
We have investigated two process techniques: resist ashing and oxide hard mask trimming. A combination of ashing and trimming produces sub-30-nm MOSFET gate. These techniques require neither specific equipment nor materials. These can be used to fabricate experimental devices with line width beyond the limit of optical lithography or high-throughput -beam lithography. They provide 25-nm gate pa...
متن کاملOxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography
A simple top-down fabrication technique that involves scanning probe lithography on Si is presented. The writing procedure consists of a chemically selective patterning in mesitylene. Operating in an organic media is possible to perform local oxidation or solvent decomposition during the same pass by tuning the applied bias. The layer deposited with a positively biased tip with sub-100-nm later...
متن کاملPerformance of the Raith 150 electron-beam lithography system
The performance of a Raith 150 electron-beam lithography system is reported. The system’s resolution, stability, intrafield distortion, stitching, and overlay performance are evaluated. Patterning at lowand high-acceleration voltages is compared. The system was used to pattern sub-20 nm features, and the largest intrafield distortion for a 100 mm field was measured to be 15 nm. Pattern-placemen...
متن کاملCharacterization of the Electric Current Generation Potential of the Pseudomonas aeruginosa Using Glucose, Fructose, and Sucrose in Double Chamber Microbial Fuel Cell
Background: Different concentrations of the simple carbon substrates i.e. glucose, fructose, and sucrose were tested to enhance the performance of the mediator-less double chamber microbial fuel cell (MFC). Objectives: The power generation potential of the different electron donors was studied using a mesophilic Fe (III) reducer and non-fermentative bacteria Pseudomonas aeruginosa</em...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 50 شماره
صفحات -
تاریخ انتشار 2010